EFFECTS OF BUILT-IN STRAIN ON LUMINESCENCE AND ABSORPTION-SPECTRA OF GAN EPITAXIAL CRYSTALS

被引:17
作者
MATSUMOTO, T [1 ]
AOKI, M [1 ]
机构
[1] UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO, TOKYO, JAPAN
关键词
D O I
10.1143/JJAP.13.1583
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1583 / 1588
页数:6
相关论文
共 25 条
[1]   INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].
BARKER, AS ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1973, 7 (02) :743-750
[2]   BAND STRUCTURES OF GAN AND ALN [J].
BLOOM, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2027-&
[3]   PRESSURE AND TEMPERATURE DEPENDENCE OF ABSORPTION EDGE IN GAN [J].
CAMPHAUSEN, DL ;
CONNELL, GAN .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4438-+
[4]  
Cunningham RD, 1972, J LUMIN, V5, P21, DOI [10.1016/0022-2313(72)90032-4, DOI 10.1016/0022-2313(72)90032-4]
[5]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[6]   DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].
DINGLE, R ;
ILEGEMS, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&
[7]   STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].
DINGLE, R ;
SHAKLEE, KL ;
LEHENY, RF ;
ZETTERSTROM, RB .
APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+
[8]   LUMINESZENZEIGENSCHAFTEN UND PHOTOLEITUNGSEIGENSCHAFTEN VON DOTIERTEM GAN [J].
GRIMMEISS, HG ;
GROTH, R ;
MAAK, J .
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (09) :799-806
[9]   LOW-TEMPERATURE LUMINESCENCE OF GAN [J].
GRIMMEISS, HG ;
MONEMAR, B .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4054-+
[10]   LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].
ILEGEMS, M ;
LOGAN, RA ;
DINGLE, R .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&