Study of the reaction at Cu/3C-SiC interface

We have investigated solid state reaction at Cu/3C-SiC(001) interface in an annealing temperature range between 250 degreesC and 950 degreesC, using soft X-ray emission spectroscopy (SXES) and X-ray diffractometry (XRD). The interface reaction between Cu and 3C-SiC has not occurred for the Cu(180 nm)/3C-SiC specimens annealed at less than or equal to 750 degreesC, and the formation of Cu-silicide is found from SXES analysis for Cu(180 nm)/3C-SiC specimens annealed at 850 degreesC and 950 degreesC. It is clarified that the reaction resultant is easy to be oxidized due to the presence of oxygen. The reaction products for the specimens are inferred to be a Cu-silicide, possibly Cu3Si, by comparing measured Si KP spectra with synthesized Si KP spectra of SiO2 with that of a Cu-silicide. possibly Cu3Si, which is prepared by solid phase reaction of a Cu(120 nm)/Si(111) specimen and analyzed by XRD. (C) 2001 Elsevier Science B.V. All rights reserved.