OFF-ANGLE SIC(0001) SURFACE AND CU/SIC INTERFACE REACTION

被引：11

作者：

NISHIMORI, K

TOKUTAKA, H

NAKANISHI, S

KISHIDA, S

ISHIHARA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.L1345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1345 / L1348

页数：4

共 10 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[3]

Hatanaka H., 1987, Journal of the Vacuum Society of Japan, V30, P265, DOI 10.3131/jvsj.30.265

[4] THE EFFECT OF HEAT-TREATMENT ON AU SCHOTTKY CONTACTS ON BETA-SIC [J].

IOANNOU, DE ;

PAPANICOLAOU, NA ;

NORDQUIST, PE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1694-1699

[5]

Koga K., 1987, Journal of the Vacuum Society of Japan, V30, P886, DOI 10.3131/jvsj.30.886

[6]

Kuroda N., 1987, 19 C SOL STAT DEV MA, P227

[7] COMPARATIVE ELECTRON SPECTROSCOPIC STUDIES OF SURFACE SEGREGATION ON SIC(0001) AND SIC(0001BAR) [J].

MUEHLHOFF, L ;

CHOYKE, WJ ;

BOZACK, MJ ;

YATES, JT .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2842-2853

[8] COMPARATIVE OXIDATION STUDIES OF SIC(0001) AND SIC(0001) SURFACES [J].

MUEHLHOFF, L ;

BOZACK, MJ ;

CHOYKE, WJ ;

YATES, JT .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2558-2563

[9] LEED-AES STUDY OF THE AU-SI(100) SYSTEM [J].

OURA, K ;

HANAWA, T .

SURFACE SCIENCE, 1979, 82 (01) :202-214

[10] THE SI(111)/CU INTERFACE STUDIED WITH SURFACE SENSITIVE TECHNIQUES [J].

ROSSI, G ;

KENDELEWICZ, T ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :987-990

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