Resolution improvement of ion projector with a low energy spread multicusp ion source

被引：15

作者：

Bruenger, WH

Torkler, M

Leung, KN

Lee, Y

Williams, MD

Loeschner, H

Stengl, G

Fallmann, W

Paschke, F

Stangl, G

Rangelow, IW

Hudek, P

机构：

[1] Fraunhofer Institute-ISiT, I., 25524 Itzehoe

[2] Lawrence Berkeley Natl. Laboratory, Berkeley, CA

[3] Ion Microfabrication Systems, IMS, Vienna

[4] Technical University Vienna, Vienna

[5] Univ. Kassel, Kassel

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00044-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

new multicusp ion source developed by the Lawrence Berkeley Laboratory has been implemented into the ion projector of the Fraunhofer institute ISiT in Berlin. This source with low energy spread of approximate to 2eV reduces chromatic aberration so that 50nm lines can be printed. with an exposure dose of 0.3 mu C/cm(2) of 75keV He+ ions into standard 300nm thick DUV resist (Shipley UV II HS).

引用

页码：477 / 480

页数：4

共 6 条

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Hertlein, WG ;

Hudek, P ;

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Loeschner, H ;

Rangelow, IW ;

Torkler, M .

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[5]

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[6]

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