Dielectric studies of Alq3 and transport mechanisms

被引:6
作者
Jeong, YS
Troadec, D
Moliton, A
Ratier, B
Antony, R
Veriot, G
机构
[1] Univ Limoges, Fac Sci, UMOP EA 1072, F-87060 Limoges, France
[2] LCR, THALES, F-91404 Orsay, France
关键词
organic LED; dielectric relaxation; trap depth; transport mechanism;
D O I
10.1016/S0379-6779(01)00622-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
From dielectric measurements in the 20 Hz-1 MHz frequency range and between 150 and 320 K, we deduced a relaxation energy we attribute to the depth of traps filled with remaining electrons. The mean activation energy is around 0.20 eV, value in good agreement with previous determinations by other techniques. This value seems independent of the Alq3 sample preparation. The proof of the level existence around 0.20 eV confirms the transport mechanism scheme by way of these intermediate levels. Nevertheless, the experimental measurements are disturbed by other phenomena, in particular, by electrical contacts. The intensification by UV light of the dielectric absorption, that is to say the photodipolar effect, becomes hidden by the photoconductivity component. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:195 / 200
页数:6
相关论文
共 13 条
[11]   ELECTRONIC-PROPERTIES IN DISORDERED SOLIDS .3. HOPPING TRANSPORT MECHANISMS ASSOCIATED TO PAIR MODELS AND POLARON CONDUCTION [J].
MOLITON, A ;
LUCAS, B .
ANNALES DE PHYSIQUE, 1994, 19 (03) :299-352
[12]   ELECTRONIC-PROPERTIES AND BAND SCHEMES IN AMORPHOUS-SEMICONDUCTORS .2. ELECTRONIC TRANSPORT [J].
MOLITON, A ;
RATIER, B .
ANNALES DE PHYSIQUE, 1991, 16 (03) :305-344
[13]  
Mott N., 1993, CONDUCTION NONCRYSTA