Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

被引：14

作者：

Kumakura, K ^{[1
]}

Makimoto, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1447593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 mum and its doping concentration was estimated to be lower than mid-10(17) cm(-3). We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10(-5) to -10(-4) A. (C) 2002 American Institute of Physics.

引用

页码：1225 / 1227

页数：3

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