INTEGRATED COMPLEMENTARY HBT MICROWAVE PUSH-PULL AND DARLINGTON AMPLIFIERS WITH P-N-P ACTIVE LOADS

被引：20

作者：

KOBAYASHI, KW ^{[1
]}

UMEMOTO, DK ^{[1
]}

VELEBIR, JR ^{[1
]}

OKI, AK ^{[1
]}

STREIT, DC ^{[1
]}

机构：

[1] TRW CO INC,PHOTOLITHOG WET ETCH SECT,GAAS FLEXIBLE MFG PROC LAB,REDONDO BEACH,CA 90278

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1993年 / 28卷 / 10期

关键词：

D O I：

10.1109/4.237515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers which integrate both n-p-n and p-n-p devices on the same chip using selective molecular beam epitaxy (MBE). An HBT wideband amplifier utilizing the Darlington configuration and implementing a p-n-p active load has a gain of 7.5 dB and a bandwidth from dc to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz.

引用

页码：1011 / 1017

页数：7

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