Low-voltage and high-field-effect mobility organic transistors with a polymer insulator - art. no. 072101

被引:138
作者
Jang, Y [1 ]
Kim, DH [1 ]
Park, YD [1 ]
Cho, JH [1 ]
Hwang, M [1 ]
Cho, KW [1 ]
机构
[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 780784, South Korea
基金
欧洲研究理事会;
关键词
D O I
10.1063/1.2173633
中图分类号
O59 [应用物理学];
学科分类号
摘要
A key issue in research into organic thin-film transistors (OTFTs) is low-voltage operation. In this study, we fabricated a pentacene thin-film transistor with an ultrathin layer of polyvinyl alcohol (9 nm) as a gate insulator, and obtained a device with excellent electrical characteristics at low operating voltages (below 2 V). This device was found to have a field-effect mobility of 1.1 cm(2)/V s, a threshold voltage of -0.98 V, an exceptionally low subthreshold slope of 180 mV/decade, and an on/off current ratio of 10(6). This favorable combination of properties means that such OTFTs can be operated successfully at voltages below 2 V.
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页数:3
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共 30 条
[1]   Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs [J].
Colinge, JP ;
Park, JW ;
Xiong, W .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :515-517
[2]   Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films [J].
Collet, J ;
Tharaud, O ;
Chapoton, A ;
Vuillaume, D .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1941-1943
[3]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[4]  
2-9
[5]   Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J].
Dimitrakopoulos, CD ;
Purushothaman, S ;
Kymissis, J ;
Callegari, A ;
Shaw, JM .
SCIENCE, 1999, 283 (5403) :822-824
[6]   Low-cost all-polymer integrated circuits [J].
Drury, CJ ;
Mutsaers, CMJ ;
Hart, CM ;
Matters, M ;
de Leeuw, DM .
APPLIED PHYSICS LETTERS, 1998, 73 (01) :108-110
[7]  
FOWKES FM, 1967, TREATISE ADHESION AD, V1, P352
[8]   THE MECHANISM OF THE CROSS LINKING OF POLYVINYL-ALCOHOL) BY AMMONIUM DICHROMATE WITH UV-LIGHT [J].
GRIMM, L ;
HILKE, KJ ;
SCHARRER, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) :1767-1771
[9]   Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates [J].
Groner, MD ;
Elam, JW ;
Fabreguette, FH ;
George, SM .
THIN SOLID FILMS, 2002, 413 (1-2) :186-197
[10]   Low-voltage organic transistors with an amorphous molecular gate dielectric [J].
Halik, M ;
Klauk, H ;
Zschieschang, U ;
Schmid, G ;
Dehm, C ;
Schütz, M ;
Maisch, S ;
Effenberger, F ;
Brunnbauer, M ;
Stellacci, F .
NATURE, 2004, 431 (7011) :963-966