A reliable and manufacturable method to induce a stress of >1 GPa on a p-channel MOSFET in high volume manufacturing

被引：25

作者：

Arghavani, R ^{[1
]}

Xia, L

M'Saad, H

Balseanu, M

Karunasiri, G

Mascarenhas, A

Thompson, SE

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

[2] USN, Postgrad Sch, Dept Phys, Monterey, CA 93943 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

[4] Univ Florida, Coll Engn, Gainesville, FL 32611 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 02期

关键词：

compressive silicon; mobility enhancement; Si-Ge; strain; strained transistors; stress; stress nitride; stress oxide; tensile silicon;

D O I：

10.1109/LED.2005.862277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter discusses a reliable and manufacturable-integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond I mA/mu m at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film.

引用

页码：114 / 116

页数：3

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A reliable and manufacturable method to induce a stress of &gt;1 GPa on a p-channel MOSFET in high volume manufacturing

A reliable and manufacturable method to induce a stress of >1 GPa on a p-channel MOSFET in high volume manufacturing