Tunnel-MR and spin electronics in metal-nonmetal granular systems

被引：67

作者：

Mitani, S ^{[1
]}

Fujimori, H

Takanashi, K

Yakushiji, K

Ha, JG

Takahashi, S

Maekawa, S

Ohnuma, S

Kobayashi, N

Masumoto, T

Ohnuma, M

Hono, K

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Res Inst Elect & Magnet Mat, Sendai, Miyagi 9820807, Japan

[3] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

关键词：

magnetoresistance; tunneling; Coulomb blockade; metal-nonmetal granular system; application;

D O I：

10.1016/S0304-8853(98)01041-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent advances in the researches of tunnel-magnetoresistance (tunnel-MR) in metal-nonmetal granular systems are overviewed, showing mainly our results on Co-Al-O films. Electron microscopy observations revealed that sputter-deposited Co-Al-O films possess well-defined metal-nonmetal granular structures with Co granules of 2-3 Mn in diameter. Anomalous temperature and bias-voltage dependence of MR was found in Co-Al-O granular films, and was explained by a theory of spin-dependent higher-order tunneling. Magnetic field sensitivity of tunnel-MR in metal-nonmetal granular systems was dramatically improved by means of granular-in-gap (GIG) structures. Perspectives for the future application are also discussed with GIGs. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：179 / 184

页数：6

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