Phonons as a probe of short-range order in Si1-xCx alloys

被引:63
作者
Rucker, H
Methfessel, M
Dietrich, B
Pressel, K
Osten, HJ
机构
[1] Institut für Halbleiterphysik, D-15204 Frankfurt
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 03期
关键词
D O I
10.1103/PhysRevB.53.1302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper shows that by combining theoretical and experimental results for local Si-C phonon modes in dilute Si1-xCx alloys, information concerning the short-range order can be obtained. Calculations using an anharmonic Keating model predict satellite peaks near the vibrational frequency of an isolated C impurity which are associated with second-, third-, etc., nearest-neighbor C-C pairs. By comparing theoretical spectra with those obtained by Raman and infrared absorption spectroscopy, we conclude that the probability for a third-nearest-neighbor coordination of the C atoms is considerably above that fora purely random alloy. This confirms earlier work predicting an attractive third-nearest-neighbor interaction of the C impurities due to elastic interactions.
引用
收藏
页码:1302 / 1309
页数:8
相关论文
共 20 条
[1]   PHONON DISPERSIONS IN GAXAL1-XAS ALLOYS [J].
BARONI, S ;
DEGIRONCOLI, S ;
GIANNOZZI, P .
PHYSICAL REVIEW LETTERS, 1990, 65 (01) :84-87
[2]  
Born M., 1988, DYNAMICAL THEORY CRY
[3]  
Davies G., 1994, HDB SEMICONDUCTORS, V3
[4]   LATTICE DISTORTION IN A STRAIN-COMPENSATED SI1-X-YGEXCY LAYER ON SILICON [J].
DIETRICH, B ;
OSTEN, HJ ;
RUCKER, H ;
METHFESSEL, M ;
ZAUMSEIL, P .
PHYSICAL REVIEW B, 1994, 49 (24) :17185-17190
[5]   GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].
EBERL, K ;
IYER, SS ;
ZOLLNER, S ;
TSANG, JC ;
LEGOUES, FK .
APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035
[6]   BACKSCATTERING ANALYSIS OF SI1-YCY LAYERS USING THE C-12(HE-4,HE-4)C-12 RESONANCE AT 4.265 MEV [J].
ENDISCH, D ;
OSTEN, HJ ;
ZAUMSEIL, P ;
ZINKEALLMANG, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 100 (01) :125-132
[7]  
GARWORZEWSKI P, 1994, J APPL PHYS, V75, P7869
[8]   GROWTH AND PROPERTIES OF STRAINED SI1-X-YGEXCY LAYERS [J].
JAIN, SC ;
OSTEN, HJ ;
DIETRICH, B ;
RUCKER, H .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) :1289-1302
[9]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[10]  
MADELUNG O, 1982, PHYSICS GROUP 4 EL A, V17