An input-free V-T extractor circuit using a series connection of three transistors

被引:2
作者
Filanovsky, IM
机构
[1] Department of Electrical Engineering, University of Alberta, Edmonton, AB
关键词
D O I
10.1080/002072197135904
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a self-biased MOS transistor circuit with the ground referenced output voltage equal to the threshold voltage V-T. The circuit employs a series connection of three transistors where the middle transistor is in linear operation and external transistors are in saturation. The circuit can be applied for V-T extraction of both n-channel and p-channel transistors. The range of currents for better measuring of V-T in each case is established by simulation.
引用
收藏
页码:527 / 532
页数:6
相关论文
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