AUTOMATIC VT EXTRACTORS BASED ON AN NXN2 MOS-TRANSISTOR ARRAY AND THEIR APPLICATION

被引：32

作者：

WANG, ZH

机构：

[1] SWISS FED INST TECHNOL,DEPT ELECT ENGN,ELECTR LAB,CH-8092 ZURICH,SWITZERLAND

[2] FASELEC CORP,CH-8045 ZURICH,SWITZERLAND

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 09期

关键词：

D O I：

10.1109/4.149434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the development of the incremental and decremental V(T) extractors based on the square-law characteristic and an n x n2 transistor array is described. Different implementations have been discussed and the effect of nonidealities such as mobility reduction, channel-length modulation, mismatch, and body effect has been analyzed. Besides automatic V(T) extraction, parameter K of an MOS transistor can also be extracted automatically using the V(T) extractor, without any need of calculation and delay, and the extracted V(T) and K are, respectively, in voltage and current. Experimental results are presented and indicate that the differences between extracted values using the V(T) extractor and the most popular numerical method are as small as 0.15% and 0.064%. Additional applications such as in level shifting, temperature compensation, and temperature measurement, where the V(T) extractor can be used either as a PTAT sensor or as a centigrade sensor, are presented.

引用

页码：1277 / 1285

页数：9

共 8 条

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[2]

FRANCO S, 1988, DESIGN OPERATIONAL A

[3]

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[4]

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