N-CHANNEL ENHANCEMENT-MODE MOSFET CHARACTERISTICS FROM 10-K TO 300-K

被引：43

作者：

TEWKSBURY, SK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 12期

关键词：

D O I：

10.1109/T-ED.1981.20640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1519 / 1529

页数：11

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