TEMPERATURE-DEPENDENCE OF MOSFET CHARACTERISTICS IN WEAK INVERSION

被引：8

作者：

NISHIDA, M ^{[1
]}

OHYABU, H ^{[1
]}

机构：

[1] TOKYO SANYO ELECT CO LTD,ORA GUN,GUMMA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 10期

关键词：

D O I：

10.1109/T-ED.1977.18987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1245 / 1248

页数：4

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