P-MOSFET PARAMETERS AT CRYOGENIC TEMPERATURES

被引：22

作者：

MADDOX, RL ^{[1
]}

机构：

[1] ROCKWELL INT CORP, ELECTR RES DIV, ANAHEIM, CA 92803 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期

关键词：

D O I：

10.1109/T-ED.1976.18340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：16 / 21

页数：6

共 35 条

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J].

ARNOLD, E ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1966, 9 (09) :344-&

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J].

CHEN, JTC ;

MULLER, RS .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :828-834

[4] SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :923-925

[5] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY [J].

CHENG, YC ;

SULLIVAN, EA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :187-192

[6] SCATTERING OF ELECTRONS IN MAGNETIC AND ELECTRIC SURFACE STATES BY SURFACE ROUGHNESS [J].

CHENG, YC .

SURFACE SCIENCE, 1971, 27 (03) :663-&

[7] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[9]

GROVE AS, 1967, PHYS TECHNOL S, P312

[10]

GROVE AS, 1967, PHYS TECHNOL S, P333

← 1 2 3 4 →