N-CHANNEL ENHANCEMENT-MODE MOSFET CHARACTERISTICS FROM 10-K TO 300-K

被引:43
作者
TEWKSBURY, SK
机构
关键词
D O I
10.1109/T-ED.1981.20640
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1519 / 1529
页数:11
相关论文
共 26 条
[22]  
WILSON EA, 1977, TRUE LIQUID COOLING, P341
[23]   MOSFETS IN 0DEGREESK APPROXIMATION - STATIC CHARACTERISTICS OF MOSFETS IN 0DEGREESK APPROXIMATION [J].
WU, SH ;
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1974, 17 (11) :1125-1137
[24]  
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
[25]   ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J].
YOUNG, DR ;
IRENE, EA ;
DIMARIA, DJ ;
DEKEERSMAECKER, RF ;
MASSOUD, HZ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6366-6372
[26]  
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