Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors

被引：102

作者：

Liu, Bo ^{[1
]}

McCarthy, Mitchell A. ^{[2
]}

Yoon, Youngki ^{[3
]}

Kim, Do Young ^{[2
]}

Wu, Zhuangchun ^{[1
]}

So, Franky ^{[2
]}

Holloway, Paul H. ^{[2
]}

Reynolds, John R. ^{[4
]}

Guo, Jing ^{[3
]}

Rinzler, Andrew G. ^{[1
]}

机构：

[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Chem, Gainesville, FL 32611 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 19期

关键词：

D O I：

10.1002/adma.200800601

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field-effect transistor (figure) and a vertical light-emitting transistor.

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收藏

页码：3605 / +

页数：6

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