Ultra-Thin Body PMOSFETs with selectively deposited Ge source/drain

被引：28

作者：

Choi, YK ^{[1
]}

Ha, D ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultra-Thin Body (UTB) MOSFETs with body thickness down to 4nm and selectively deposited Ge raised source and drain (S/D) are demonstrated for the first time. Devices with gate length down to 30nm show excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge by the ultra-thin body are investigated.

引用

页码：19 / 20

页数：2

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