Raman and photoluminescence characterizations of electrochemically deposited ZnxCd1-xS layers

被引：15

作者：

Ichimura, M

Furukawa, T

Shirai, K

Goto, F

机构：

[1] Center for Cooperative Research, Dept. of Elec. and Comp. Engineering, Nagoya Institute of Technology, Gokiso

来源：

MATERIALS LETTERS | 1997年 / 33卷 / 1-2期

关键词：

Raman; photoluminescence; electrochemically deposited ZnxCd1-xS;

D O I：

10.1016/S0167-577X(97)00067-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS, ZnS, and ZnxCd1-xS alloy were deposited from acidic solutions by the electrochemical technique, and characterized mainly by optical methods. Raman scattering was observed even for as-deposited films, and the alloy composition x was determined from the longitudinal-optical phonon frequency. Photoluminescence (PL) was detected at 77 K after annealing at 300 degrees C. The peak energy for ZnxCd1-xS is larger than that of CdS, as expected from the larger bandgap of the alloy. The PL peak was red-shifted by annealing at higher temperature, which was attributed to defect formation during the annealing.

引用

页码：51 / 55

页数：5

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