Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

被引：14

作者：

Ramil, AM

Singh, TB ^{[1
]}

Haber, NT

Günes, S

Andreev, A

Matt, GJ

Resel, R

Sitter, H

Sariciftci, S

机构：

[1] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells, Altenbergerstr 69, A-4040 Linz, Austria

[2] Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria

[3] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[4] Univ Leoben, Inst Phys, A-8700 Leoben, Austria

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 288卷 / 01期

关键词：

morphology; C-60 thin film; hot wall epitaxy; organic field-effect transistors;

D O I：

10.1016/j.jcrysgro.2005.12.061

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hot wall epitaxially grown C-60 based organic field-effect transistors (OFETs) show relatively high electron mobilities of 0.4-1 cm(2)/Vs. We report results of thin film grown with various growth conditions such as preheating and initial substrate temperatures resulting in strikingly different fullerene film nanomorphology. The mobility is enhanced up to 3 cm(2)/Vs for films grown at a substrate temperatures of 130 degrees C. This improvement in the mobility is explained in terms of a transition from a disordered interface consisting of small-elongated grains to a well-ordered C-60 film with bigger and rounder grains. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：123 / 127

页数：5

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