Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

被引：220

作者：

Kobayashi, S ^{[1
]}

Takenobu, T

Mori, S

Fujiwara, A

Iwasa, Y

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

[3] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1577383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an improvement in performance of C-60 thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >10(8) and field-effect mobilities in the range of 0.5-0.3 cm(2)/Vs. The mobility obtained is close to that derived from the photocurrent measurements on C-60 thin films and comparable to a very high value among n-type organic TFTs. (C) 2003 American Institute of Physics.

引用

页码：4581 / 4583

页数：3

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