Electrical phase transitions on the alkali-metal-adsorbed Si(001) surfaces

被引:15
作者
Lee, KD
Chung, J
机构
[1] Physics Department, Basic Science Research Institute, Pohang University of Science and Technology
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 19期
关键词
D O I
10.1103/PhysRevB.55.12906
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The adsorption of alkali metals (AM's) on the Si(001) surface has been studied using high-resolution electron-energy-loss spectroscopy. We find that the metallization at low AM coverages manifests itself with a unique surface plasmon excitation. Which turns out to be common to the AM (Li,Na,Cs)/Si(001) surfaces. With increasing AM coverage, these AM-induced metallic surfaces become semiconducting again revealing the characteristic metal-semiconductor transitions (MST's) at the onset of the first ordered structures: (4 X 1) and (2 X 3) for Na and Cs adsorption, respectively. We invoke a mechanism leading to a band insulator to understand such a MST accompanying a disorder-order structural transition. In addition, the distinctly different electrical properties of the AM saturated surfaces, semiconducting for Na and metallic for Cs, are attributed to the availability of some excess adatoms beyond 1 monolayer at room temperature.
引用
收藏
页码:12906 / 12909
页数:4
相关论文
共 21 条
[1]   LOW-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF THE CS/SI(001) SURFACE - DEPENDENCE ON CS COVERAGE [J].
ABUKAWA, T ;
OKANE, T ;
KONO, S .
SURFACE SCIENCE, 1991, 256 (03) :370-378
[2]  
[Anonymous], 1989, METALLIZATION METAL
[3]   VIBRATIONAL PROPERTY OF THE SLOW N2+ IONS DEPOSITED SINX FILMS [J].
BAEK, DH ;
CHUNG, JW .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (04) :445-448
[4]   PEIERLS INSTABILITY CONSIDERATIONS FOR ALKALI-METAL CHAINS ON SI(001)-2X1 [J].
BATRA, IP .
SURFACE SCIENCE, 1991, 242 (1-3) :354-357
[5]   ADSORPTION OF K ON SI(100)2X1 AT ROOM-TEMPERATURE STUDIED WITH PHOTOELECTRON-SPECTROSCOPY [J].
CHAO, YC ;
JOHANSSON, LSO ;
KARLSSON, CJ ;
LANDEMARK, E ;
UHRBERG, RIG .
PHYSICAL REVIEW B, 1995, 52 (04) :2579-2586
[6]   Coverage-dependent study of the Cs/Si(100)2x1 surface using photoelectron spectroscopy [J].
Chao, YC ;
Johansson, LSO ;
Uhrberg, RIG .
PHYSICAL REVIEW B, 1996, 54 (08) :5901-5907
[7]   SEMICONDUCTOR-TO-METAL TRANSITION IN AN ULTRATHIN INTERFACE - CS/GAAS(110) [J].
DINARDO, NJ ;
WONG, TM ;
PLUMMER, EW .
PHYSICAL REVIEW LETTERS, 1990, 65 (17) :2177-2180
[8]  
ENTA Y, 1989, PHYS REV B, V36, P1105
[9]   ELECTRONIC EXCITATIONS ON SI(100)(2X1) [J].
FARRELL, HH ;
STUCKI, F ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ ;
LEVINSON, M .
PHYSICAL REVIEW B, 1984, 30 (02) :721-725
[10]   EMPTY SURFACE-STATES ON THE SI(100) 2X1-K SURFACE - EVIDENCE FOR OVERLAYER METALLIZATION [J].
JOHANSSON, LSO ;
REIHL, B .
PHYSICAL REVIEW LETTERS, 1991, 67 (16) :2191-2194