Structure determination of the indium-induced Si(111)-(4 x 1) reconstruction by surface x-ray diffraction

被引：171

作者：

Bunk, O

Falkenberg, G

Zeysing, JH

Lottermoser, L

Johnson, RL

Nielsen, M

Berg-Rasmussen, F

Baker, J

Feidenhans'l, R

机构：

[1] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[2] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.59.12228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed structural model for the indium-induced Si(111)-(4 x 1) surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic (h omega=9.1 keV) synchrotron radiation. The reconstruction is quasi-one-dimensional. The main features in the structure are chains of silicon atoms alternating with zigzag chains of indium atoms on top of an essentially unperturbed silicon lattice. The indium coverage corresponds to one monolayer. The structural model consistently explains all previously published experimental data. [S0163-1829(99)08419-2].

引用

页码：12228 / 12231

页数：4

共 18 条

[1] SURFACE ELECTRONIC-STRUCTURE OF A SINGLE-DOMAIN SI(111)4X1-IN SURFACE - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J].

ABUKAWA, T ;

SASAKI, M ;

HISAMATSU, F ;

GOTO, T ;

KINOSHITA, T ;

KAKIZAKI, A ;

KONO, S .

SURFACE SCIENCE, 1995, 325 (1-2) :33-44

[2] Core-level photoemission study of the Si(111)4x1-In surface [J].

Abukawa, T ;

Sasaki, M ;

Hisamatsu, F ;

Nakamura, M ;

Kinoshita, T ;

Kakizaki, A ;

Goto, T ;

Kono, S .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 :233-236

[3] Atomic structure of the in on Si(111)(4x1) surface [J].

CollazoDavila, C ;

Marks, LD ;

Nishii, K ;

Tanishiro, Y .

SURFACE REVIEW AND LETTERS, 1997, 4 (01) :65-70

[4] THE GROWTH AND ATOMIC-STRUCTURE OF THE SI(111)-INDIUM INTERFACE STUDIED BY SURFACE X-RAY-DIFFRACTION [J].

FINNEY, MS ;

NORRIS, C ;

HOWES, PB ;

JAMES, MA ;

MACDONALD, JE ;

JOHNSON, AD ;

VLIEG, E .

PHYSICA B, 1994, 198 (1-3) :246-248

[5] Strongly anisotropic band dispersion of an image state located above metallic nanowires [J].

Hill, IG ;

McLean, AB .

PHYSICAL REVIEW LETTERS, 1999, 82 (10) :2155-2158

[6] Metallicity of In chains on Si(111) [J].

Hill, IG ;

McLean, AB .

PHYSICAL REVIEW B, 1997, 56 (24) :15725-15728

[7]

HILL IG, IN PRESS PHYS REV B

[8] Surface reconstructions of In on Si(111) [J].

Kraft, J ;

Ramsey, MG ;

Netzer, FP .

PHYSICAL REVIEW B, 1997, 55 (08) :5384-5393

[9] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1706-&

[10]

MARKS LD, COMMUNICATION

← 1 2 →