Core-level photoemission study of the Si(111)4x1-In surface

被引：32

作者：

Abukawa, T

Sasaki, M

Hisamatsu, F

Nakamura, M

Kinoshita, T

Kakizaki, A

Goto, T

Kono, S

机构：

[1] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 98077,JAPAN

[2] UNIV TOKYO,INST SOLID STATE PHYS,SYNCHROTRON RADIAT LAB,TOKYO 106,JAPAN

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷

关键词：

D O I：

10.1016/0368-2048(96)02964-7

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

In 4d and Si 2p photoemission spectra for the Si(111)4x1-In surface have been measured. It is found that the In 4d spectra consist of mainly two components and that no significant surface core level shirt is present on Si 2p. The latter finding suggests that the substrate is almost ideally terminated by a one-to-one bonding with In atoms. It is also found that the In 4d spectra are asymmetric in shape while Si 2p spectra are symmetric. This shows that In atoms form a metallic over-layer with covalent bondings to a semiconducting Si substrate.

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页码：233 / 236

页数：4

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