Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

被引：145

作者：

Liu, HQ

Reccius, CH

Craighead, HG ^{[1
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Nanobiotechnol Ctr, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2149980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2/Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm(2)/V s in the saturation regime, and a current on/off ratio of 10(3) in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

引用

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页码：1 / 3

页数：3

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