Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

被引:145
作者
Liu, HQ
Reccius, CH
Craighead, HG [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Nanobiotechnol Ctr, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2149980
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2/Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm(2)/V s in the saturation regime, and a current on/off ratio of 10(3) in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.
引用
收藏
页码:1 / 3
页数:3
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