Characterisation of vapour phase grown CdTe and (Cd,Zn)Te for detector applications

被引：12

作者：

Fiederle, M

Feltgen, T

Rogalla, M

Meinhardt, J

Ludwig, J

Runge, K

Benz, KW

机构：

[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany

[2] Univ Freiburg, Inst Kristallog, D-7800 Freiburg, Germany

[3] Univ Freiburg, Freiburger Mat Forschungszentrum, D-7800 Freiburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 434卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(99)00451-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The growth of CdTe from the vapour phase offers several improvements in crystal quality and homogeneity. CdTe and (Cd, Zn)Te were grown by the modified Markov technique. The transport properties and the detector performance are given and compared to melt grown material. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：152 / 157

页数：6

共 11 条

[1] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].