Growth of twin-free CdTe single crystals in a semi-closed vapour phase system

被引：25

作者：

Laasch, M ^{[1
]}

Kunz, T ^{[1
]}

Eiche, C ^{[1
]}

Fiederle, M ^{[1
]}

Joerger, W ^{[1
]}

Kloess, G ^{[1
]}

Benz, KW ^{[1
]}

机构：

[1] UNIV JENA,INST GEOWISSENSCH,D-07749 JENA,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

CdTe; physical vapour deposition; semi-closed system; transport calculations; interface; morphology;

D O I：

10.1016/S0022-0248(97)00040-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

V and Ga doped CdTe single crystals with one inch diameter were grown without wall contact in a semi-closed vapour phase system (modified Markov method). By vapour transport modelling, we demonstrate that volatile impurities and excess species are enabled to condense in a heal sink connected to the growth chamber. Vapour composition and component fluxes are controlled by the temperature profile, in particular by the sink temperature. The grown crystals exhibit pronounced {111}, {110} and {100} facetting. The influence of the deep heat sink on interface stability is discussed in terms of growth morphology and formation of inclusions. Piezobirefringence measurements indicate nearly stress-free growth. The resistivities of the grown crystals are up to 3 x 10(9) Omega.cm.

引用

页码：696 / 707

页数：12

共 36 条

[1] SUBLIMATION GROWTH AND X-RAY TOPOGRAPHIC CHARACTERIZATION OF CDTE SINGLE-CRYSTALS [J].