CHARACTERIZATION OF TI AND V DOPED CDTE BY TIME-DEPENDENT CHARGE MEASUREMENT (TDCM) AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS)

被引：10

作者：

EICHE, C ^{[1
]}

JOERGER, W ^{[1
]}

FIEDERLE, M ^{[1
]}

EBLING, D ^{[1
]}

SCHWARZ, R ^{[1
]}

BENZ, KW ^{[1
]}

机构：

[1] UNIV FREIBURG,FREIBURGER MAT FORSCHUNGSZENTRUM,D-79104 FREIBURG,GERMANY

来源：

OPTICAL MATERIALS | 1995年 / 4卷 / 2-3期

关键词：

D O I：

10.1016/0925-3467(94)00061-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several CdTe crystals doped with vanadium (V) or titanium (Ti) were grown by a vertical Bridgman technique and the Sublimation Travelling Heater Method (STHM). Spatially resolved resistivity measurements were performed using the Time Dependent Charge Measurement (TDCM) method. It is shown that V doping leads to a more homogeneous resistivity distribution in contrast to Ti. Photoinduced Current Transient Spectroscopy (PICTS) has been used to characterize the deep levels. Up to three additional levels are introduced through the doping with transition metals.

引用

页码：214 / 218

页数：5

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