Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics

被引：20

作者：

Grabs, P ^{[1
]}

Richter, G

Fiederling, R

Becker, CR

Ossau, W

Schmidt, G

Molenkamp, LW

Weigand, W

Umbach, E

Sedova, IV

Ivanov, SV

机构：

[1] Univ Wurzburg, Inst Phys EP3, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Inst Phys EP2, D-97074 Wurzburg, Germany

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1477933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the growth characteristics of a type of II-VI/III-V heterostructure, (Cd,Mn)Se/InAs, which shows promise for application in spintronics. We used a variety of approaches for growing the heterostructure, and found that a high epilayer quality could be obtained by incorporation of a thin ZnTe buffer layer between the two materials. (C) 2002 American Institute of Physics.

引用

页码：3766 / 3768

页数：3

共 20 条

[1] RAMAN-SPECTROSCOPY OF 2 NOVEL SEMICONDUCTORS AND RELATED SUPERLATTICES - CUBIC CD1-XMNXSE AND CD1-XZNXSE [J].

ALONSO, RG ;

SUH, EK ;

RAMDAS, AK ;

SAMARTH, N ;

LUO, H ;

FURDYNA, JK .

PHYSICAL REVIEW B, 1989, 40 (06) :3720-3728

[2] RAMAN AND REFLECTIVITY SPECTRA OF CUBIC CD1-XMNXSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ALONSO, RG ;

LEE, YR ;

OH, E ;

RAMDAS, AK ;

LUO, H ;

SAMARTH, N ;

FURDYNA, JK ;

PASCHER, H .

PHYSICAL REVIEW B, 1991, 43 (12) :9610-9620

[3]

BERKOVITS VL, 1991, SOV PHYS SEMICOND+, V25, P847

[4] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].

Fert, A ;

Jaffrès, H .

PHYSICAL REVIEW B, 2001, 64 (18)

[5] Injection and detection of a spin-polarized current in a light-emitting diode [J].

Fiederling, R ;

Keim, M ;

Reuscher, G ;

Ossau, W ;

Schmidt, G ;

Waag, A ;

Molenkamp, LW .

NATURE, 1999, 402 (6763) :787-790

[6] Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer [J].

Fischer, F ;

Keller, M ;

Gerhard, T ;

Behr, T ;

Litz, T ;

Lugauer, HJ ;

Keim, M ;

Reuscher, G ;

Baron, T ;

Waag, A ;

Landwehr, G .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1650-1654

[7] RELATION OF MAGNETO-OPTICAL PROPERTIES OF FREE-EXCITONS TO SPIN ALIGNMENT OF MN2+ IONS IN CD1-XMNXTE [J].

GAJ, JA ;

PLANEL, R ;

FISHMAN, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (05) :435-438

[8] MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures [J].

Ivanov, SV ;

Solov'ev, VA ;

Toropov, AA ;

Sedova, IV ;

Terent'ev, YV ;

Kaygorodov, VA ;

Tkachman, MG ;

Kop'ev, PS ;

Molenkamp, LW .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :693-698

[9] Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy [J].

Ivanov, SV ;

Solov'ev, VA ;

Moiseev, KD ;

Sedova, IV ;

Terent'ev, YV ;

Toropov, AA ;

Meltzer, BY ;

Mikhailova, MP ;

Yakovlev, YP ;

Kop'ev, PS .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1655-1657

[10] SURFACE-STRUCTURE OF INAS (001) TREATED WITH (NH4)2SX SOLUTION [J].

KATAYAMA, M ;

AONO, M ;

OIGAWA, H ;

NANNICHI, Y ;

SUGAHARA, H ;

OSHIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (5A) :L786-L789

← 1 2 →