SURFACE-STRUCTURE OF INAS (001) TREATED WITH (NH4)2SX SOLUTION

被引：32

作者：

KATAYAMA, M

AONO, M

OIGAWA, H

NANNICHI, Y

SUGAHARA, H

OSHIMA, M

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 5A期

关键词：

(NH4)2SX TREATMENT; SURFACE STRUCTURE; INAS; COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; LOW-ENERGY ELECTRON DIFFRACTION; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

D O I：

10.1143/JJAP.30.L786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface structure of (NH4)2S(x)-treated InAs (001) was studied by means of coaxial impact collision ion scattering spectroscopy (CAICISS) and low-energy electron diffraction (LEED). These observations revealed that arsenic atoms at the outermost surface are partially replaced by sulfur atoms. Significantly, the (2 x 1) reconstruction of the (NH4)2S(x)-treated surface with heat treatment at 380-degrees-C is described by the formation of dimers lined up in [11BAR0] direction. This surface model is supported by the data obtained by synchrotron radiation photoemission spectroscopy (SRPES).

引用

页码：L786 / L789

页数：4

共 15 条

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