Submicron structures of the charge-density-wave conductor NbSe3

被引：6

作者：

Mantel, OC

Chalin, F

Dekker, C

van der Zant, HSJ

Latyshev, YI

Pannetier, B

Monceau, P

机构：

[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands

[3] Univ Grenoble 1, Ctr Rech Tres Basses Temp, CNRS, F-38042 Grenoble 9, France

[4] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia

来源：

SYNTHETIC METALS | 1999年 / 103卷 / 1-3期

关键词：

charge-density waves; transport measurements;

D O I：

10.1016/S0379-6779(99)80006-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have lithographically patterned small wire structures into a 0.35 mu m thin crystal of the charge-density-wave (CDW) conductor NbSe3. Voltage-probe spacings down to 0.5 mu m have been realized. Electrical transport measurements show that the electron-beam patterning process has not degraded the NbSe3 material of the structures. Both the resistivity and the threshold field for CDW sliding agree with reported data on thin unpatterned crystals. The wire structures permit the study of mesoscopic CDW transport. At the shortest length scales, first observations show a reduction of the phase-slip voltage and, below 50 K, strong fluctuations and hysteresis effects in the current-voltage characteristics.

引用

页码：2612 / 2615

页数：4

共 16 条

[1] DYNAMICS OF CHARGE-DENSITY WAVE .1. IMPURITY PINNING IN A SINGLE CHAIN [J].