Quantum dots embedded into silicon nanowires effectively partition electron confinement

被引：14

作者：

Avramov, Pavel V. ^{[1
]}

Fedorov, Dmitri G. ^{[2
]}

Sorokin, Pavel B. ^{[3
,4
,5
]}

Chernozatonskii, Leonid A. ^{[5
]}

Ovchinnikov, Sergei G. ^{[3
,4
]}

机构：

[1] Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

[3] LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia

[4] Siberian Fed Univ, Krasnoyarsk 660041, Russia

[5] RAS, NM Emanuel Inst Biochem Phys, Moscow 119334, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2973464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.

引用

页数：6

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