Atomic and electronic structure of new hollow-based symmetric families of silicon nanoclusters

被引:13
作者
Avramov, Pavel V. [1 ,2 ]
Fedorov, Dmitri G. [3 ]
Sorokin, Pavel B. [2 ,4 ,5 ]
Chernozatonskii, Leonid A. [4 ]
Gordon, Mark S. [6 ]
机构
[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki Branch, Takasaki, Gunma 3701292, Japan
[2] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[3] Nat Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
[4] Russian Acad Sci, NM Emaunel Inst Biochem Phys, Moscow 119334, Russia
[5] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[6] Iowa State Univ, Dept Chem, Ames Natl Lab, Ames, IA 50011 USA
关键词
D O I
10.1021/jp0777216
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have systematically constructed a set of stable silicon nanocluster families with large arbitrary fullerene-type hollows inside. In addition, conglomerate structures are designed by connecting the nanoclusters through pentagonal and hexagonal junctions. The atomic and electronic structure of the proposed objects is investigated using the semiempirical quantum-mechanical method. It is shown that within each family the band gap and the stability are inversely proportional to the particle effective size. The clusters inherit a wide variety of structural and symmetry properties from their parent silicon fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of nanomaterials with tunable electronic properties.
引用
收藏
页码:18824 / 18830
页数:7
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