Highly oriented (Pb, La)TiO3 thin films prepared by sol-gel process

被引:8
作者
Koo, J [1 ]
Jang, JH [1 ]
Bae, BS [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1023/A:1004704915915
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly oriented lead lanthanum titanate (PLT) thin films on MgO (100) and c-plane sapphire single-crystal substrates have been prepared using the sol-gel process. The orientation and the mechanism of the highly preferred oriented PLT films derived sol-gel process have been investigated. The sol-gel PLT films fabricated on MgO (100) and c-plane sapphire substrates grow preferentially with (100) and (111) crystallographic orientations respectively, regardless of the film thickness and La content. In addition, it is confirmed that the tetragonality of the PLT perovskite structure decreases with an increase of La content. The a-axis orientation of the sol-gel PLT film on MgO (100) substrate is controlled only by formation of the intrinsic tensile stress during the crystallization of the film. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:5075 / 5080
页数:6
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