Optical characterization of wurtzite gallium nitride nanowires

被引：37

作者：

Lee, MW ^{[1
]}

Twu, HZ

Chen, CC

Chen, CH

机构：

[1] Natl Chunghsing Univ, Dept Phys, Taichung 402, Taiwan

[2] Natl Taiwan Normal Univ, Dept Chem, Taipei 116, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1416476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of the gallium nitride (GaN) nanowires are examined by the transmission method in the ultraviolet-visible range (1-5 eV) and by the reflection method in the infrared range (500-4000 cm-1). The absorption edge of the GaN nanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, E-g(T)=3.724-9.97x10(-4)/(861+T) eV. The plasma frequency and the free-carrier density of the GaN nanowires, deduced from the infrared reflectance minima, are estimated to be omega (p)=1100 +/- 120 cm(-1) and n(f)=3.73x10(17) cm(-3), respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors. (C) 2001 American Institute of Physics.

引用

页码：3693 / 3695

页数：3

共 22 条

[1] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].