Optimization of precursor pulse time in improving bulk trapping characteristics of atomic-layer-deposition HfO2 gate oxides

被引：10

作者：

Akbar, MS

Lee, JC

Moumen, N

Peterson, J

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78758 USA

[2] Int SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 08期

关键词：

D O I：

10.1063/1.2178403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that precursor HfCl4 plays an important role in optimizing atomic-layer-deposition HfO2 bulk trapping characteristics. By systematic study, it has been observed that, under certain optimized precursor pulse time condition (450 ms pulse as compared to standard 150 ms), bulk trapping characteristics could be improved significantly without affecting the equivalent oxide thickness and leakage current characteristics of the devices. Slight improvement in mobility of the devices could also be obtained. Secondary-ion-mass-spectroscopy analysis shows that increase in the chlorine composition by increasing precursor pulse time could be attributed to the observed improvement. Drastic increase in pulse time (1500 ms) negates the benefit. (c) 2006 American Institute of Physics.

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页数：3

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共 18 条

[1] Mobility improvement after HCl post-deposition cleaning of high-κ dielectric:: A potential issue in wet etching of dual metal gate process technology [J].

Akbar, MS ;

Moumen, N ;

Barnett, J ;

Lee, YH ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :163-165

[2] Integration issues of HIGH-K gate stack: Process-induced charging [J].

Bersuker, G ;

Gutt, J ;

Chaudhary, N ;

Moumen, N ;

Lee, BH ;

Barnett, J ;

Gopalan, S ;

Kim, BY ;

Young, CD ;

Peterson, J ;

Li, HJ ;

Zeitzoff, PM ;

Sim, JH ;

Lysaght, P ;

Gardner, M ;

Murto, RW ;

Huff, HR .

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, :479-484

[3] Characterization of HfO2 and HfOxNy gate dielectrics grown by PE metallorganic CVD with a TaN gate electrode [J].

Choi, KJ ;

Kim, JH ;

Yoon, SG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (04) :G262-G265

[4] Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts [J].

Ding, SJ ;

Hu, H ;

Zhu, CX ;

Li, MF ;

Kim, SJ ;

Cho, BJ ;

Chan, DSH ;

Yu, MB ;

Du, AY ;

Chin, A ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (10) :681-683

[5] Characterisation of HfO2 deposited by photo-induced chemical vapour deposition [J].

Fang, Q ;

Zhang, JY ;

Wang, ZM ;

Wu, JX ;

O'Sullivan, BJ ;

Hurley, RK ;

Leedham, TL ;

Davies, H ;

Audier, MA ;

Jimenez, C ;

Senateur, JP ;

Boyd, IW .

THIN SOLID FILMS, 2003, 427 (1-2) :391-396

[6] Deposition of HfO2 thin films in HfI4-based processes [J].

Forsgren, K ;

Hårsta, A ;

Aarik, J ;

Aidla, A ;

Westlinder, J ;

Olsson, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (10) :F139-F144

[7] Charge trapping and detrapping in HfO2 high-κ gate stacks [J].

Gusev, EP ;

D'Emic, C ;

Zafar, S ;

Kumar, A .

MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) :273-277

[8] Degradation of TA2O5 gate dielectric by TiCl4-based chemically vapor deposited TiN film in W/TiN/Ta2O5/Si system [J].

Lee, JW ;

Han, CH ;

Park, JS ;

Park, JW .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B) :2810-2813

[9] Threshold signature scheme with multiple signing policies [J].

Lee, NY .

IEE PROCEEDINGS-COMPUTERS AND DIGITAL TECHNIQUES, 2001, 148 (02) :95-99

[10] Dual poly-Si gate metal oxide semiconductor field effect transistors fabricated with high-quality chemical vapor deposition HfO2 gate dielectrics [J].

Lee, S ;

Kwong, DL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12) :7256-7258