Charge trapping and detrapping in HfO2 high-κ gate stacks

被引：31

作者：

Gusev, EP ^{[1
]}

D'Emic, C ^{[1
]}

Zafar, S ^{[1
]}

Kumar, A ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, SRDC, Yorktown Hts, NY 10598 USA

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

high-kappa gate dielectrics; charge trapping; HfO2; atomic layer deposition;

D O I：

10.1016/j.mee.2004.01.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with ultrathin HfO2 high-kappa gate dielectrics deposited by atomic layer deposition (ALD). The focus of this work is twofold: (i) to investigate the role of processing on charge trapping in the ALD HfO2 stacks and (ii) to study trapped charge (in)stability (i.e., detrapping) as a function of temperature, gate bias and light illumination. The kinetics of both trapping and detrapping suggest the existence of more than one kind of existing traps with their energy levels located deep in the forbidden gap of the insulator. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：273 / 277

页数：5

共 15 条

[1] Evidence for hole and electron trapping in plasma deposited ZrO2 thin films [J].

Chavez, JR ;

Devine, RAB ;

Koltunski, L .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4284-4286

[2] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[3]

Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI [DOI 10.1109/IEDM.2001.979537, 10.1109/IEDM.2001.979537]

[4] Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues [J].

Gusev, EP ;

Cartier, E ;

Buchanan, DA ;

Gribelyuk, M ;

Copel, M ;

Okorn-Schmidt, H ;

D'Emic, C .

MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) :341-349

[5] Charge detrapping in HfO2 high-κ gate dielectric stacks [J].

Gusev, EP ;

D'Emic, CP .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5223-5225

[6] Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation [J].

Houssa, M ;

Afanas'ev, VV ;

Stesmans, A ;

Heyns, MM .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1885-1887

[7] Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks [J].

Houssa, M ;

Afanas'ev, VV ;

Stesmans, A ;

Heyns, MM .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3134-3136

[8]

KERBER A, 2003, IRPS

[9] Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors [J].

Kumar, A ;

Fischetti, MV ;

Ning, TH ;

Gusev, E .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1728-1737

[10] Hot-carrier charge trapping and reliability in high-K dielectrics [J].

Kumar, A ;

Ning, TH ;

Fischetti, MV ;

Gusev, E .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :152-153

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