Charge trapping and detrapping in HfO2 high-κ gate stacks

被引：31

作者：

Gusev, EP ^{[1
]}

D'Emic, C ^{[1
]}

Zafar, S ^{[1
]}

Kumar, A ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, SRDC, Yorktown Hts, NY 10598 USA

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

high-kappa gate dielectrics; charge trapping; HfO2; atomic layer deposition;

D O I：

10.1016/j.mee.2004.01.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with ultrathin HfO2 high-kappa gate dielectrics deposited by atomic layer deposition (ALD). The focus of this work is twofold: (i) to investigate the role of processing on charge trapping in the ALD HfO2 stacks and (ii) to study trapped charge (in)stability (i.e., detrapping) as a function of temperature, gate bias and light illumination. The kinetics of both trapping and detrapping suggest the existence of more than one kind of existing traps with their energy levels located deep in the forbidden gap of the insulator. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：273 / 277

页数：5

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