Memory window of highly c-axis oriented ferroelectric YMnO3 thin films

被引：45

作者：

Lee, HN ^{[1
]}

Kim, YT ^{[1
]}

Park, YK ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136791, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

Annealing - Capacitors - Crystallization - Ferroelectric materials - Mixing - Oxygen - Partial pressure - Thin films - Yttrium compounds;

D O I：

10.1063/1.124213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YMnO3 thin films have been sputtered with different O-2 partial pressures from 0% to 20%. Only the YMnO3 sputtered without O-2 can be crystallized along (001) c-axis orientation after annealing at 870 degrees C. Mixing 10%-20% O-2 partial pressure in the sputtering ambient, the excess Y2O3 in the YMnO3 films suppresses the c-axis oriented crystallization. Effects of crystallization on the ferroelectric properties of Pt/YMnO3/Y2O3/Si (MEFIS) and Pt/YMnO3/Si (MFS) gate capacitors have been investigated. The memory window of the MEFIS capacitor is enhanced by the c-axis oriented crystallization of the YMnO3. (C) 1999 American Institute of Physics. [S0003-6951(99)01925-7].

引用

页码：3887 / 3889

页数：3

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