Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

被引：44

作者：

Lee, HN

Lim, MH

Kim, YT ^{[1
]}

Kalkur, TS

Choh, SH

机构：

[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136791, South Korea

[2] Korea Univ, Dept Phys, Seoul 136701, South Korea

[3] Colorado State Univ, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

ferroelectric; insulator; thin film; SrBi2Ta2O9; Y2O3; MEFIS; FET;

D O I：

10.1143/JJAP.37.1107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.

引用

页码：1107 / 1109

页数：3

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