Electrical characteristics of PT-bismuth strontium tantalate(BST)-P-SI with zirconium oxide buffer layer

被引：26

作者：

Lim, M

Kalkur, TS

机构：

[1] Microlectron. Research Laboratories, Department of Electrical Engineering, University of Colorado, Colorado Springs

来源：

INTEGRATED FERROELECTRICS | 1997年 / 14卷 / 1-4期

关键词：

D O I：

10.1080/10584589708019998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of Pt-BST-ZrO2-p-Si metal-ferroelectric-insulator-p Si (MFIS) Structures have been investigated. The BST film was deposited by sol gel technique and annealed in oxygen environment for about an hour at 800(0) C. The capacitance-voltage characteristics of these structures show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The hysteresis in the C-V characteristics were found to be dependent on the thickness of the buffer layer as well as on the duration of the applied voltage. A model based on the polarization of the ferroelectric film and charge injection at the silicon - insulator interface was proposed to explain the electrical characteristics.

引用

页码：247 / 257

页数：11

共 16 条

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