THE EFFECT OF THIN-FILM SCALING ON THE CAPACITANCE VERSUS VOLTAGE CHARACTERISTIC OF A FERROELECTRIC MEMORY CELL

The effects on the capacitance versus voltage (CV) measurement from reducing the film thickness of Symetrix Y-1 ferroelectric material will be presented. The effects on the zero bias capacitance, coercive voltage and coercive electric field as a function of film thickness will also be presented. Obtained CV data was compared to data obtained from hysteresis measurements. The films were fabricated with a spin-on method and the thicknesses of the films were 1741, 2592, 3321, and 4050 Angstroms. The zero voltage capacitance showed a linear relationship as a function of film thickness and a change in the dielectric constant for films greater than 2500 Angstroms. A simple circuit model suggests the enhancement of the dielectric constant for the thin films may be caused by the space charge regions.