METAL FERROELECTRIC SEMICONDUCTOR CHARACTERISTICS OF BISMUTH TITANATE FILMS ON SILICON

被引：48

作者：

KALKUR, TS

KULKARNI, J

LU, YC

ROWE, M

HAN, WY

KAMMERDINER, L

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT & COMP ENGN,PISCATAWAY,NJ 08855

[2] RAMTRON CORP,COLORADO SPRINGS,CO

来源：

FERROELECTRICS | 1991年 / 116卷 / 1-2期

关键词：

D O I：

10.1080/00150199108007937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：135 / 146

页数：12

相关论文

共 13 条

[1] BAGLEE DA, 1983, VLSI ELECTRONICS MIC, P165
[2] BYEON SG, 1990, IEEE T ELECTRON DEV, V37, P72
[3] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS
CUMMINS, SE
CROSS, LE
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2268 - &
[4] SWITCHING BEHAVIOR OF FERROELECTRIC BI4TI3O12
CUMMINS, SE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1958 - &
[5] ELLIOT R, 1965, CONSTITUTION BINARY, P190
[6] GHOSH PK, 1986, 6TH P INT M FERR BET, P596
[7] YTTRIUM-OXIDE BASED METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON SILICON
KALKUR, TS
KWOR, RY
DEARAUJO, CAP
[J]. THIN SOLID FILMS, 1989, 170 (02) : 185 - 189
[8] YTTRIUM-OXIDE SILICON DIOXIDE - A NEW DIELECTRIC STRUCTURE FOR VLSI ULSI CIRCUITS
MANCHANDA, L
GURVITCH, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 180 - 182
[9] FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI4TI3O12 FILM
SUGIBUCHI, K
KUROGI, Y
ENDO, N
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2877 - 2881
[10] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P402