STUDY ON FERROELECTRIC THIN-FILMS FOR APPLICATION TO NDRO NONVOLATILE MEMORIES

被引：69

作者：

NAKAO, Y

NAKAMURA, T

KAMISAWA, A

TAKASU, H

机构：

[1] ROHM CO., LTD. 21, Saiin Mizosaki-cho, Kyoto 615, Ukyo-ku

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe an experimental study on ferroelectric non-volatile memory. The test devices using a MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure were developed for 1-Tr-type NDRO (non-destructive readout) memory. PZT (Lead-zirconate-titanate) and PT (lead-titanate) thin films were deposited on various bottom electrodes by sol-gel method. As electrodes, Pt, Pt/Ti, Pt/Ti/Ta and Pt/IrO2 were deposited by RF magnetron sputtering. We found out that a variation in the electrodes caused drastic changes in the C-V characteristics and fatigue characteristics of MFMIS capacitors. The I-V characteristics of Pt/PZT/Pt/SiO2/p-Si MFMIS FET showed a hysteresis loop and the direction of the loop corresponded to ferroelectric polarization in the PZT film. A 2.7 V memory window was achieved using a 6 V programming voltage. PZT thin films on Pt/IrO2 electrodes showed no fatigue after 10(12) switching cycles.

引用

页码：23 / 34

页数：12

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