Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures

被引：43

作者：

Sakai, I ^{[1
]}

Tokumitu, E ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

ferroelectric film; PbZrxTi1-xO3 (PZT); CeO2; Si; metal-ferroelectric-semiconductor (MFS) FET;

D O I：

10.1143/JJAP.35.4987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the crystalline quality and electrical properties of PbZr1-xTixO3 (PZT) films on Si substrates with epitaxially grown CeO2 buffer layers. CeO2 buffer layers were deposited by the electron-beam-assisted evaporation technique, and PZT films were formed by the sol-gel technique. It is shown that CeO2 buffer layers, which were epitaxially grown on Si(111) substrates at 500 degrees C, effectively suppressed Si and Pb interdiffusion between PZT films and Si substrates. Furthermore, the capacitance-voltage and current-voltage properties of PZT/CeO2/Si indicated a ferroelectric nature and excellent breakdown strength.

引用

页码：4987 / 4990

页数：4

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