FERROELECTRIC PBZR0.2TI0.8O3 THIN-FILMS ON EPITAXIAL Y-BA-CU-O

被引:101
作者
RAMESH, R
INAM, A
CHAN, WK
TILLEROT, F
WILKENS, B
CHANG, CC
SANDS, T
TARASCON, JM
KERAMIDAS, VG
机构
关键词
D O I
10.1063/1.105651
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated epitaxial ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3. Only the (00l) peaks of the PbZr0.2Ti0.8O3 (PZT) film are observed, indicating that the epitaxial, c-axis oriented YBCO film is a good structural template for the heteroepitaxial growth of PZT films, in addition to being a metallic bottom electrode. A saturation polarization and remanence as high as 38 and 26.5-mu-C/cm2 (at 7.5 V, 0.5 kHz), respectively, have been achieved. The coercive field is about 100 kV/cm.
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页码:3542 / 3544
页数:3
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