Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories

被引：161

作者：

Scott, JF

Ross, FM

deAraujo, CAP

Scott, MC

Huffman, M

机构：

[1] SYMETRIX CORP,COLORADO SPRINGS,CO

[2] FUS SEMICOND,ROCKVILLE,MD 20855

[3] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80933

[4] UNIV COLORADO,MICROELECTR LAB,COLORADO SPRINGS,CO 80933

[5] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720

来源：

MRS BULLETIN | 1996年 / 21卷 / 07期

关键词：

D O I：

10.1557/S0883769400035892

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：33 / 39

页数：7

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