Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories

被引:161
作者
Scott, JF
Ross, FM
deAraujo, CAP
Scott, MC
Huffman, M
机构
[1] SYMETRIX CORP,COLORADO SPRINGS,CO
[2] FUS SEMICOND,ROCKVILLE,MD 20855
[3] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80933
[4] UNIV COLORADO,MICROELECTR LAB,COLORADO SPRINGS,CO 80933
[5] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720
关键词
D O I
10.1557/S0883769400035892
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:33 / 39
页数:7
相关论文
共 46 条