PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS

Ferroelectric SrBi2Ta2O9 thin films were synthesized on Pt/Ti/SiO2/Si substrates using a solution deposition process, and structural and electrical properties were investigated. The spin-on films crystallized during firing above 700°C. The films showed high diffraction peaks of (105) and (200), while little peaks from (00l) planes were observed. Good ferroelectric properties were obtained for a 280 nm thick film; Pr and Ec were 10.0 μC/cm2 and 38 kV/cm, respectively. Fatigue endurance was excellent; the hysteresis loop does not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application. © 1995 American Institute of Physics.