Analysis of leakage currents in photovoltaic modules under high-voltage bias in the field

被引:82
作者
del Cueto, JA [1 ]
McMahon, TJ [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
PROGRESS IN PHOTOVOLTAICS | 2002年 / 10卷 / 01期
关键词
D O I
10.1002/pip.401
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
As photovoltaic modules become more widely disseminated in high-power or utility-power applications, their ability to withstand high voltage relative to ground becomes a reliability issue. Long-term effects of exposure to high-voltage stress in the field are investigated. Starting in early 1998, four commercially available PV modules inaugurated the high-voltage stress test at the Outdoor Test Facility at NREL. Modules representing both crystalline and amorphous silicon technologies were deployed on the high-voltage stress testbed located outdoors in order to simulate and assess operation in high-voltage array configurations. They were biased at positive and negative polarity 600 Vat all times-except for 1 min at noon each day, when they were subjected to 2200 V bias-and their leakage currents to ground were monitored continuously. The ubiquitous effects of moisture on leakage conductance are analyzed. Module leakage conductance is found to be thermally activated with a characteristic energy that depends on relative humidity. Separate current paths likely responsible for leakage conductance are analyzed and identified at opposite ends of the relative humidity range. Leakage current data are integrated against time to arrive at accumulated charge due to long-term, high-voltage exposure.
引用
收藏
页码:15 / 28
页数:14
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